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16212 / MJW16212 npn bp power deflection transistor
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NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
The MJW16212 is a state–of–the–art SWITCHMODE
E bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors.
1500 Volt Collector–Emitter Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Application Specific State–of–the–Art Die Design
Fast Switching: 200 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ)
Low Saturation Voltage: 0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive
Low Collector–Emitter Leakage Current — 250 mA Max at 1500 Volts — VCES
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
