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> MTW32N20E, 32A 200V, power mosfet, qty 4
MTW32N20E, 32A 200V, power mosfet, qty 4
MTW32N20EG, 32 Amp 200 Volt, N-Channel, Power MOSFET, 3 pin TO-247, Lead-Free, Quantity 4, ON Semiconductor.
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
Click here to see the datasheet.
Quantity 4 ..... New Parts !!!!!
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