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2SK2382 / K2382 / toshiba field effect transistor
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
* DC.DC Converter Applications
Low drain.source ON resistance : RDS (ON) = 0.13 . (typ.)
* High forward transfer admittance : |Yfs| = 17S (typ.)
* Low leakage current : IDSS = 100 µA (max) (VDS = 200 V)
* Enhancement.mode : Vth = 1.5~3.5V (VDS = 10 V, ID = 1 mA)
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