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> 2SK3314 / K3314 / toshiba field effect transistor
2SK3314 / K3314 / toshiba field effect transistor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
* DC.DC Converter Applications
Fast reverse recovery time : trr = 105 ns (typ.)
* Built.in high.speed free.wheeling diode
* Low drain.source ON resistance : RDS (ON) = 0.35 . (typ.)
* High forward transfer admittance : |Yfs| = 9.9 S (typ.)
* Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
* Enhancement.mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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