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2SD1185 / D1185 silicon npn triple diffused transistor
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Please note: The following spec sheet / information is provided by the manufacturer and may cover several different items and/or products. I am offering the part listed in the heading and picture ONLY.
Manufacturer Name = Hitachi Semiconductor
Description = Si NPN Power BJT
I(C) Abs.(A) Collector Current = 5.0
Absolute Max. Power Diss. (W) = 50
h(FE) Min. Static Current Gain = 10
@I(C) (A) (Test Condition) = 300m
@V(CE) (V) (Test Condition) = 5.0
t(s) Max. (s) Storage time. = 1.0u
t(f) Max. (s) Fall time. = 1.0u
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