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Transistor pnp nte 385 electronics parts


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The NTE385 is a silicon NPN transistor in a TO3 type package designed high voltage, high speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line operated switchmode applications.
Collector-Emitter Voltage, VCEO(sus)
Collector-Emitter Voltage (VBE = -1.5V), VCEX
Total Power Dissipation (TC = +25°C), PD
Total Power Dissipation (TC = +100°C), PD
Operating Junction Temperature Range, TJ
Storage Temperature Range, Tstg
Maximum Thermal Resistance, Junction-to-Case, RthJC
Lead Temperature (During Soldering, 1/8" from case, 5sec), TL
Pulse test: Pulse Width = 5ms, Duty Cycle Electrical Characteristics: (TC = +25°C unless otherwise specified)
Collector-Emitter Sustaining Voltage
VCEX = 850V, VBE(off) = 1.5V, TC = +125°C
VCE = 850V, RBE = 10 Ohm, TC = +100°C
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
IC = 10A, IB = 2A, TC = +100°C
IC = 8A, IB = 1.6A, TC = +100°C
Base-Emitter Saturation Voltage
IC = 10A, IB = 2A, TC = +100°C
Switching Characteristics (Resistive Load)
VCC = 300V, IC = 10A, IB = 2A, tp = 30µs, Duty Cycle Switching Characteristics (Inductive Load, Clamped)
IC = 10A, IB1 = 2A, TC = +25°C
IC = 10A, IB1 = 2A, TC = +100°C
Pulse test: Pulse Width = 300µs. Duty Cycle IF YOU HAVE ANY QUESTIONS PLEASE EMAIL US AT:
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Transistor pnp nte 385 electronics parts