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Jan 2N1016 b transistor silicon npn power bjt
JAN 2N1016B Transistor Silicon NPN Power BJT
Military bipolar silicon power NPN transistor, type JAN CAY 2N1016B with mounting hardware.
Description = Si NPN Power BJT
I(C) Abs.(A) Collector Current=7.5
Absolute Max. Power Diss. (W)=150
@V(CBO) (V) (Test Condition)=100
h(FE) Min. Static Current Gain=10
@I(C) (A) (Test Condition)=5.0
@V(CE) (V) (Test Condition)=4.0
f(T) Min. (Hz) Transition Freq=20k
t(on) Max. (s) Turn-On Time=6.0u