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> 2) ge-12 aka 2N4296 NTE124 npn sil power ge transistor
2) ge-12 aka 2N4296 NTE124 npn sil power ge transistor
STOCK PHOTO is for ILLUSTRATIVE PURPOSES. The GE-12 NPN Sil. Power Transistor, which looks very similar to this stock photo, is FACTORY PACKED IN ITS ORIGINAL PACKAGING (Please see second photo below.)
Vintage General Electric NPN SIL.
POWER TRANSISTORS thought to be from 1960s-1970s
in Original Factory-Sealed Packaging
The following specs are contained on the GE-10 antistatic packaging:
There is also a small diagram on the package, featuring the Emiter, Base & Case Collection positions.
The NTE Equivalent of the GE-12 is NTE124 for which the Data Sheet follows:
The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
* Collector-Emitter Sustaining Voltage: VCEO(sus) = 300V @ IC = 5mA
* DC Current Gain: &nbsdp;hFE = 40 - 200 @ IC = 100mA
* Current Gain-Bandwidth Product: &nbsdp;fT = 10Mhz (Min) @ IC = 100mA
Collector-Emitter Voltage, VCEO
Total Power Dissipation (TC = +25°C), PD
Operating Junction Temperature Range, TJ
Storage Temperature Range, Tstg
Thermal Resistance, Junction-to-Case, RthJC
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Collector-Emitter Sustaining Voltage
VCE = 300V, VEB(off) = 1.5V, TC = +100°C
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
VCE = 10V, IC = 100mA, f = 10MHz, Note 2
VCB = 100V, IE = 0, f = 100kHz
VCE = 20V, IC = 100mA, f = 1kHz,
Note 1. Pulse Test: Pulse Width
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