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> New HGTG20N60A4 600V smps series n-channel igbt
New HGTG20N60A4 600V smps series n-channel igbt
600V, SMPS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
These IGBT’s are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mode power supplies.
* >100kHz Operation At 390V, 20A
* 200kHz Operation At 390V, 12A
* 600V Switching SOA Capability
* Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125°C
* Temperature Compensating SABERâ„¢ Model