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New ECG519 NTE519 - fast switch silicon diode- lot of 5


Silicon Diode, Ultra Fast Switch
Peak Repetitive Reverse Voltage, VRRM
Continuous Reverse Voltage, VR
Surge Forward Current (tp = 1µs), IFSM(AV)
Repetitive Peak Forward Current, IFRM< FONT>
Average Forward Current, IF(AV)
Power Dissipation (I = 4mm, TL = +45°C), PV
Power Dissipation (I = 4mm, TL Operating Junction Temperature, TJ
Storage Temperature Range, Tstg
Maximum Thermal Resistance, Junction-to-Ambient (I = 4mm, TL = Constant), RthJA
Electrical Characteristics: (TJ = +25°C unless otherwisze specified)
IF = 10mA, VR = 6V, iR = 0.1 · IR, RL = 100Ohm